Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-12
2006-09-12
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S239000, C438S259000
Reexamination Certificate
active
07105400
ABSTRACT:
There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.
REFERENCES:
patent: 5416042 (1995-05-01), Beach et al.
patent: 5452178 (1995-09-01), Emesh et al.
patent: 5739563 (1998-04-01), Kawakubo et al.
patent: 6153460 (2000-11-01), Ohnishi et al.
patent: 6184927 (2001-02-01), Kang
patent: 6346741 (2002-02-01), Van Buskirk et al.
patent: 6459111 (2002-10-01), Natori et al.
patent: 6838369 (2005-01-01), Lee et al.
patent: 2001/0044179 (2001-11-01), Kim
patent: 2001/0053058 (2001-12-01), Kim et al.
patent: 2002/0055191 (2002-05-01), Matsushita et al.
patent: 2002/0197744 (2002-12-01), Lee
patent: 1 289 017 (2003-03-01), None
Kinam Kim, “High density stand alone-FRAM: Present and Future”, Integrated Ferroelectrics, vol. 36, 2001, pp. 21-39.
Arisumi Osamu
Imai Keitaro
Itokawa Hiroshi
Moon Bum-ki
Nakazawa Keisuke
Infineon - Technologies AG
Kabushiki Kaisha Toshiba
Lindsay Jr. Walter L.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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