Manufacturing method of semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S275000, C438S581000

Reexamination Certificate

active

07022575

ABSTRACT:
An LDD structure and a silicide layer are formed without a reduction in thickness of a silicon substrate or a carbon contamination. Forming a spacer on a sidewall of a gate electrode is performed in two process steps, i.e. dry-etching and wet-etching. Also, a silicon nitride film used as a buffer film in injection of high dose of impurities is removed by wet-etching. As a result, the reduction in thickness of the silicon substrate and the carbon contamination can be prevented. In addition, variation in depth of the high and low impurity concentration regions and silicide forming region with locations on the wafer can be suppressed because of high selection ratio available with the wet-etching.

REFERENCES:
patent: 5776822 (1998-07-01), Fujii et al.
patent: 5783479 (1998-07-01), Lin et al.
patent: 5960319 (1999-09-01), Iwata et al.
patent: 6498067 (2002-12-01), Perng et al.
patent: 6509609 (2003-01-01), Zhang et al.
patent: 6537884 (2003-03-01), Yogo et al.
patent: 6630716 (2003-10-01), Juengling
patent: 6632714 (2003-10-01), Yoshikawa
patent: 6911695 (2005-06-01), Ahmed et al.
patent: 6949429 (2005-09-01), Kim et al.
patent: 2004/0043594 (2004-03-01), Kammler et al.
patent: 11-186545 (1999-07-01), None
patent: 2000-100754 (2000-04-01), None
patent: 2002-025941 (2002-01-01), None
patent: 2002-134704 (2002-05-01), None

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