Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-04-04

2006-04-04

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S581000

Reexamination Certificate

active

07022575

ABSTRACT:
An LDD structure and a silicide layer are formed without a reduction in thickness of a silicon substrate or a carbon contamination. Forming a spacer on a sidewall of a gate electrode is performed in two process steps, i.e. dry-etching and wet-etching. Also, a silicon nitride film used as a buffer film in injection of high dose of impurities is removed by wet-etching. As a result, the reduction in thickness of the silicon substrate and the carbon contamination can be prevented. In addition, variation in depth of the high and low impurity concentration regions and silicide forming region with locations on the wafer can be suppressed because of high selection ratio available with the wet-etching.

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