Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

1996-07-03

2000-08-08

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438268, 438138, 438585, 438589, H01L 21336

Patent

active

061001406

ABSTRACT:
A manufacturing method of a vertical type MOSFET, which can suppress vaporization of impurity from a semiconductor substrate and prevent variation in carrier density of the channel, is disclosed. The vertical type MOSFET is formed by forming a local oxide film to form a concavity on the element surface, removing the local oxide film by wet-etching technique, forming the gate oxide film at the sidewall of the concavity by thermal oxidation, and forming a gate electrode. Further, a polycrystalline silicon is formed on a back surface of the semiconductor substrate before removing the local oxide film. Accordingly, since the polycrystalline silicon is not removed when removing the local oxide film, vaporization of impurity from the semiconductor substrate is suppressed during the thermal oxidation for forming the gate oxide film, thereby preventing change in the carrier density of the channel.

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