Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2008-07-22

2008-07-22

Lee, Eugene (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S128000, C438S275000, C438S448000, C438S591000, C257S392000, C257S395000, C257SE21552

Reexamination Certificate

active

07402474

ABSTRACT:
A method of manufacturing a semiconductor device comprises the following steps: a step of depositing a silicon oxide film on the top surface of an epitaxial layer of the region where a high withstand voltage MOS transistor is formed; a step of subsequently depositing a silicon oxide film on the top surface of the epitaxial layer according to the thickness of a gate oxide film of a low withstand voltage MOS transistor; and a step of subsequently adjusting the thickness of the silicon oxide film on the top surface of the high withstand voltage MOS transistor by etching and forming a P-type diffusion layer by ion-implantation method. This method can manufacture elements having gate oxide films different in thickness at low cost.

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