Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2011-07-12
2011-07-12
Bryant, Kiesha R (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C257SE21413
Reexamination Certificate
active
07977253
ABSTRACT:
A method for forming a semiconductor layer having a fine shape is provided. A method for manufacturing a semiconductor device with few variations is provided. In addition, a method for manufacturing a semiconductor device with a high yield is provided where the cost can be reduced with few materials. According to the invention, a semiconductor film is partially irradiated with a laser beam to form an insulating layer, and the semiconductor film is etched using the insulating film as a mask so as to form a semiconductor layer having a desired shape. Then, the semiconductor layer is used to manufacture a semiconductor device. According to the invention, a semiconductor layer having a fine shape can be formed in a predetermined position without using a known photolithography step using a resist.
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Office Action (Application No. 200510103676.4) dated May 30, 2008.
Nakamura Osamu
Sato Junko
Yamamoto Hiroko
Anya Igwe U
Bryant Kiesha R
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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