Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2011-03-29

2011-03-29

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000, C438S199000, C438S250000, C438S264000, C438S285000, C257SE21476

Reexamination Certificate

active

07915127

ABSTRACT:
A method of forming a semiconductor device is described. First, a substrate is provided. Thereafter, a gate structure including, from bottom to top, a high-k layer, a work function metal layer, a wetting layer, a polysilicon layer and a mask layer is formed on the substrate. Afterwards, a spacer is formed on the sidewall of the gate structure. Source/drain regions are then formed in the substrate beside the gate structure. Further, an interlayer dielectric layer is formed over the substrate. Thereafter, a portion of the interlayer dielectric layer is removed to expose the surface of the mask layer. Afterwards, the mask layer and the polysilicon layer are sequentially removed to expose the surface of the wetting layer. A selective chemical vapor deposition process is then performed, so as to bottom-up deposit a metal layer from the surface of the wetting layer.

REFERENCES:
patent: 6458684 (2002-10-01), Guo et al.
patent: 6743683 (2004-06-01), Barns et al.
patent: 6858483 (2005-02-01), Doczy et al.
patent: 6887800 (2005-05-01), Metz et al.
patent: 6953719 (2005-10-01), Doczy et al.
patent: 6972225 (2005-12-01), Doczy et al.
patent: 7045428 (2006-05-01), Brask et al.
patent: 7064066 (2006-06-01), Metz et al.
patent: 7101761 (2006-09-01), Chau et al.
patent: 7105390 (2006-09-01), Brask et al.
patent: 7126199 (2006-10-01), Doczy et al.
patent: 7138323 (2006-11-01), Kavalieros et al.
patent: 7144783 (2006-12-01), Datta et al.
patent: 7148099 (2006-12-01), Datta et al.
patent: 7148548 (2006-12-01), Doczy et al.
patent: 7153734 (2006-12-01), Brask et al.
patent: 7153784 (2006-12-01), Brask et al.
patent: 7157378 (2007-01-01), Brask et al.
patent: 7176090 (2007-02-01), Brask et al.
patent: 7192856 (2007-03-01), Doczy et al.
patent: 7208361 (2007-04-01), Shah et al.
patent: 7217611 (2007-05-01), Kavalieros et al.
patent: 7220635 (2007-05-01), Brask et al.
patent: 2006/0030104 (2006-02-01), Doczy et al.
patent: 2006/0180878 (2006-08-01), Brask et al.
patent: 2008/0224235 (2008-09-01), Lavoie et al.

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2695419