Manufacturing method of semiconductor device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S783000, C257SE21639, C257SE21625, C257SE21632

Reexamination Certificate

active

07863127

ABSTRACT:
After forming a first gate electrode and a second gate electrode on a semiconductor substrate, a silicon oxide film is formed to cover an n-channel MISFET forming region, and a p-channel MISFET forming region is exposed. Subsequently, after a first element supply film made of, for example, an aluminum oxide film is formed on the whole surface of the semiconductor substrate, a heat treatment is performed. By this means, a high-concentration HfAlO film and a low-concentration HfAlO film are formed by diffusing aluminum into the first insulating film just below the second gate electrode. Thereafter, by using a magnesium oxide film as a second element supply film, magnesium is diffused into the first insulating film just below the first gate electrode, thereby forming a high-concentration HfMgO film and a low-concentration HfMgO film.

REFERENCES:
patent: 2003/0218223 (2003-11-01), Nishiyama et al.
patent: 2007/0176242 (2007-08-01), Lee et al.
patent: 2008/0083956 (2008-04-01), Mise et al.
patent: 2009/0053883 (2009-02-01), Colombo et al.
patent: 2009/0098693 (2009-04-01), Nakajima
patent: 2003-249649 (2003-09-01), None
patent: 2005-150737 (2005-06-01), None
patent: 2007-208160 (2007-08-01), None

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