Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2011-06-14

2011-06-14

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S396000, C257S303000, C257S306000

Reexamination Certificate

active

07960227

ABSTRACT:
After a first via hole leading to a ferroelectric capacitor structure are formed in an interlayer insulating film by dry etching, a second via hole to expose part of the ferroelectric capacitor structure is formed in a hydrogen diffusion preventing film so as to be aligned with the first via hole by wet etching, and a via hole constructed by the first via hole and the second via hole communicating with each other is formed.

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Japanese Office Action, Partial English-language translation, mailed Nov. 9, 2010 for corresponding Japanese Application No. 2006-089312.
USPTO, [DOAN] “U.S. Appl. No. 11/495,769 (parent)”,[CTRS] Requirement for Restriction/Election issued on Feb. 25, 2008.
USPTO, [DOAN] “U.S. Appl. No. 11/495,769 (parent)”,[CTNF] Non-Final Rejection issued on Aug. 6, 2008.
USPTO, [DOAN] “U.S. Appl. 11/495,769 (parent)”,[CTFR] Final Rejection issued on Mar. 18, 2009.

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