Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

1995-06-02

1997-04-15

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438596, H01L 218234

Patent

active

056209142

ABSTRACT:
A method of producing a semiconductor device having a LDD structure using a semiconductor substrate laminated with an insulating film, a polysilicon layer, and a first conductive layer where the first conductive layer is formed of a high melting point metal and the first conductive layer and polysilicon layer are removed in the region other than a gate pattern formation region but without exposing the insulating layer. After implanting the semiconductor substrate with a first impurity, the residual polysilicon layer in the region other than the gate pattern formation region along with a polysilicon layer sidewall in the gate pattern formation region are converted into a silicon oxide layer by subjecting to oxidation treatment, and the semiconductor substrate is laminated with a second conductive layer. Subsequently, the second conductive layer is removed by anisotropic etching so as to remain only on the sidewall of the gate pattern formation region, and the semiconductor substrate is then implanted with a second impurity to form source and drain regions.

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patent: 4906589 (1990-03-01), Chao
patent: 5061647 (1991-10-01), Roth et al.
patent: 5256586 (1993-10-01), Choi et al.
patent: 5411906 (1995-05-01), Johnson et al.
"Semiconductor World 1990, 3, pp. 122-128" (w/partial English translation); Oishi et al.

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