Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2006-10-02

2009-11-17

Tsai, H. Jey (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S644000, C438S648000, C438S649000, C438S682000, C257SE21438

Reexamination Certificate

active

07618855

ABSTRACT:
A technology capable of improving the yield in a manufacturing process of a MISFET with a gate electrode formed of a metal silicide film. A gate insulating film is formed on a semiconductor substrate and silicon gate electrodes formed of a polysilicon film are formed on the gate insulating film. Then, after a silicon oxide film is formed so as to cover the silicon gate electrodes, a surface of the silicon oxide film is polished by CMP, thereby exposing the surface of the silicon gate electrodes. Subsequently, a patterned insulating film is formed on the silicon oxide film. Thereafter, an adhesion film is formed on the silicon oxide film and the insulating film. Then, a nickel film is formed on the adhesion film. Thereafter, a silicide reaction is caused to occur between the silicon gate electrode and the nickel film via the adhesion film.

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