Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2007-10-24

2009-08-04

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S301000

Reexamination Certificate

active

07569455

ABSTRACT:
A manufacturing method of a CMOS semiconductor device includes using, in an nMOS, spike RTA (first annealing) together with ultra-rapid rising/falling temperature annealing (second annealing) whose temperature increase/decrease rate is higher than that of the spike RTA, and applying the ultra-rapid rising/falling temperature annealing (second annealing) alone in a pMOS, when activating a shallow source/drain extension region.

REFERENCES:
patent: 6551870 (2003-04-01), Ling et al.
patent: 6632718 (2003-10-01), Grider et al.
patent: 7157340 (2007-01-01), Ito et al.
patent: 2001/0041432 (2001-11-01), Lee
patent: 2005/0263835 (2005-12-01), Sakama et al.
patent: 2006/0073665 (2006-04-01), Jain
patent: 2006/0199346 (2006-09-01), Jain
patent: 2004-63574 (2004-02-01), None
patent: 2005-5406 (2005-01-01), None
patent: 2006-278532 (2006-10-01), None

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