Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2005-08-31

2009-11-10

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21492, C257SE21632, C438S780000

Reexamination Certificate

active

07615431

ABSTRACT:
Before applying a resist on a first gate insulating film, a thinner is provided on an entire surface including a surface of the first gate insulating film to wash the surface of the first gate insulating film. Specifically, while a semiconductor substrate is being rotated, onto a central part thereof the thinner is provided from a nozzle, so that the thinner is spread outward in a radial direction of the semiconductor substrate to be applied on an entire surface of the semiconductor substrate by a centrifugal force.

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“Japanese Office Action”, English summary, Mailed Jan. 20, 2009, in regards to JP App. 2005-016938.

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