Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2007-11-27

2007-11-27

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

11315013

ABSTRACT:
A method of manufacturing a semiconductor device including forming a gate oxide layer, a first conductive layer, a capacitor dielectric layer, and a second conductive layer on a semiconductor substrate. The method also includes patterning the first and second conductive layers, the gate oxide layer, and the field oxide layer so as to form a gate pattern and a capacitor pattern; selectively wet-etching the first and second conductive layer so as to project out an outward part of the capacitor dielectric layer; implanting ions into the semiconductor substrate using the gate pattern and the protruding portion of the capacitor dielectric layer as an implantation mask; and removing the protruding portion of the capacitor dielectric layer so that the patterned capacitor dielectric layer has the same width as the gate electrode and the first capacitor electrode.

REFERENCES:
patent: 4114255 (1978-09-01), Salsbury et al.
patent: 5246874 (1993-09-01), Bergemont
patent: 5496754 (1996-03-01), Bergemont et al.

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