Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2007-11-27

2007-11-27

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S383000

Reexamination Certificate

active

11011785

ABSTRACT:
This invention is directed to a manufacturing method of a semiconductor device having a MOS transistor and a diffusion resistance layer formed on a same semiconductor substrate, where current leakage from the diffusion resistance layer is minimized. The manufacturing method of the semiconductor device of the invention has following features. That is, a CVD insulation film is formed on a whole surface of an n-type well including on a gate electrode and a p+-type diffusion resistance layer formed thereon. Then, a second photoresist layer is formed having an opening above a part of the diffusion resistance layer. By using this second photoresist layer as a mask, an anisotropic etching is performed to the CVD insulation film to form a sidewall spacer on a sidewall of the gate electrode. Furthermore, by using the second photoresist layer as a mask, the p-type impurity of high concentration is doped to form a source layer and a drain layer of the MOS transistor and a contact forming p+-type layer of the diffusion resistance layer.

REFERENCES:
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patent: 6300181 (2001-10-01), Patelmo et al.
patent: 6869839 (2005-03-01), Lee et al.
patent: 09-045790 (1997-02-01), None

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