Manufacturing method of semiconductor device

Details Manufacturing method of semiconductor device Manufacturing method of semiconductor device

2007-02-13

2007-02-13

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S761000, C438S764000, C438S758000, C438S692000

Reexamination Certificate

active

10763337

ABSTRACT:
In forming a high density plasma oxide film, a projection shaped like the mesa, the peaked roof, the cone or the like is formed on an element formation region. This projection gives rise to a problem of producing a polishing scar when the CMD (Chemical Mechanical Polishing) with a ceria slurry is performed. A film having a polishing rate equivalent to the one of the high density plasma oxide film is formed on the high density plasma oxide film to reinforce a projection in the shape of a triangular prism, a cone or such, and, thereafter, the polishing is carried out, using a ceria slurry. In another method, after the first CMP polishing is performed, using a silica slurry containing grains of small particle size which make no aggregation, the second CMP polishing is performed, using a ceria slurry.

REFERENCES:
patent: 4916087 (1990-04-01), Tateoka et al.
patent: 6818539 (2004-11-01), Kanda
patent: 6936478 (2005-08-01), Tani et al.
patent: 2002/0068452 (2002-06-01), Homma et al.
patent: 6-252112 (1994-09-01), None
patent: 9-153494 (1997-06-01), None
patent: 10-64859 (1998-03-01), None
patent: 10-79423 (1998-03-01), None
patent: 11-145090 (1999-05-01), None
patent: 2000-31163 (2000-01-01), None
patent: 2000-36533 (2000-02-01), None
patent: 2000-156360 (2000-06-01), None
patent: 2001-85373 (2001-03-01), None
patent: 2002-208636 (2002-07-01), None

Affiliated with

Also associated with

Rating

Manufacturing method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3817548