Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-29
2005-03-29
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S239000, C438S240000
Reexamination Certificate
active
06872616
ABSTRACT:
In an electrode drying process in which the electrode is molded in a sheet shape by kneading activated carbon powder, a binding material and an organic solvent for lubrication and a polarizing property electrode is formed by heating and removing the organic solvent for lubrication in the molded electrode, the organic solvent for lubrication included in the electrode is removed in a state in which the above electrode is widened in the sheet shape. In a manufacturing method of an electrode sheet for the electrical double layer capacitor, continuous drying and vacuum drying are performed in a drying process.
REFERENCES:
patent: 5099398 (1992-03-01), Kurabayashi et al.
patent: 7-105316 (1995-11-01), None
patent: 2000-049052 (2000-02-01), None
patent: 2001-307964 (2001-11-01), None
Iwaida Manabu
Murakami Ken-ichi
Oyama Shigeki
Ozaki Kouki
Sato Kenji
Daido Metal Company Ltd.
Honda Motor Co. Ltd.
Nelms David
Nguyen Thinh T
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