Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2008-07-01
2008-07-01
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S607000, C438S508000, C438S508000
Reexamination Certificate
active
07393763
ABSTRACT:
There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate.An area in which monocrystalline gallium nitride410is grown is locally present on a silicon substrate100by forming silicon carbide200on the silicon substrate100to locally form the monocrystalline gallium nitride410on the above-mentioned silicon carbide200. Silicon nitride220is used as a mask in forming the above-mentioned monocrystalline gallium nitride410.
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Notification of Reasons for Refusal received from the Japan Patent Office with English translation dated Feb. 8, 2005.
Chinese Office Action dated Jun. 1, 2007 with English translation.
Hirai Seisaku
Izumi Katsutoshi
Jobe Fumihiko
Mine Keiji
Nakao Motoi
Hosiden Corporation
Kratz Quintos & Hanson, LLP
Le Dung A.
Osaka Prefecture
LandOfFree
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