Manufacturing method of integrated circuit structure

Details Manufacturing method of integrated circuit structure Manufacturing method of integrated circuit structure

2007-08-10

2009-12-29

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S167000, C257S471000

Reexamination Certificate

active

07638403

ABSTRACT:
An integrated circuit structure is described, and includes a substrate, a contact window, and a Schottky contact metal layer. A heavily doped region and a lightly doped region are formed in the substrate. The contact window is disposed above the heavily doped region, and the Schottky contact metal layer is disposed above the lightly doped region. The Schottky contact metal layer and the substrate form a Schottky diode. The material of the contact window is different from that of the Schottky contact metal layer.

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Chinese 4th Examination Report of China Application No. 2006100754875, dated Jun. 19, 2009.

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