Manufacturing method of gate oxidation films

Details Manufacturing method of gate oxidation films Manufacturing method of gate oxidation films

2005-06-09

2009-02-10

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S510000, C438S770000, C257SE21285, C257SE21335

Reexamination Certificate

active

07488652

ABSTRACT:
After forming a field insulating film12on a substrate, sacrificing or gate oxidation films are formed as oxidation films14aand14b. An ion implantation layer18is formed by one or plurality of implantation process of argon (or fluoride) ion in an element hole12ausing a resist layer16as a mask via the oxidation film14a. When the oxidation films14aand14bare used as sacrificing oxidation films, gate oxidation films are formed in the element holes12aand12bafter removing the resist film16and the oxidation films14aand14b. When the oxidation films14aand14bare used as gate oxidation films, the oxidation films are once thinned by etching and then thickened after removing the resist layer16. The gate oxidation film14ais thicker than the gate oxidation film14bby forming the ion implantation layer18.

REFERENCES:
patent: 5918116 (1999-06-01), Chittipeddi
patent: 6358819 (2002-03-01), Shelton et al.
patent: 6541393 (2003-04-01), Sugizaki et al.
patent: 30 32 608 (1981-03-01), None
patent: H08-162618 (1996-06-01), None
patent: 2000-195968 (2000-07-01), None
patent: 2001-156260 (2001-06-01), None
patent: 413863 (2000-12-01), None

Affiliated with

Also associated with

Rating

Manufacturing method of gate oxidation films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of gate oxidation films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of gate oxidation films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4070573