Manufacturing method of flash memory device

Details Manufacturing method of flash memory device Manufacturing method of flash memory device

2011-01-18

2011-01-18

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C257S314000, C257S900000, C257SE21422, C257SE21640, C257SE29129

Reexamination Certificate

active

07871885

ABSTRACT:
Embodiments relate to a manufacturing method of a flash memory device which improves electrical characteristics by reducing or preventing void generation. A manufacturing method of a flash memory device according to embodiments includes forming a plurality of gate patterns over a semiconductor substrate including a tunnel oxide layer, a floating gate, a dielectric layer, and a control gate. A spacer layer may be formed as a compound insulating layer structure over the side wall of the gate pattern. A source/drain area may be formed over the semiconductor substrate at both sides of the control gate. An insulating layer located at the outermost of the spacer layer may be removed. A contact hole may be formed between the gate patterns by forming and patterning the interlayer insulating layer. A contact plug may be formed in the contact hole.

REFERENCES:
patent: 6610571 (2003-08-01), Chen et al.
patent: 2002/0100930 (2002-08-01), Yaegashi
patent: 2002/0192915 (2002-12-01), Wada et al.
patent: 2003/0216004 (2003-11-01), Jeong et al.
patent: 2005/0048754 (2005-03-01), Yeh et al.
patent: 2006/0163678 (2006-07-01), Anezaki
patent: 1591823 (2005-03-01), None
patent: 2000174270 (2000-06-01), None

Affiliated with

Also associated with

Rating

Manufacturing method of flash memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of flash memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of flash memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2672792