Manufacturing method of fin-type field effect transistor

Details Manufacturing method of fin-type field effect transistor Manufacturing method of fin-type field effect transistor

2011-06-07

2011-06-07

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21284

Reexamination Certificate

active

07955922

ABSTRACT:
A method for manufacturing a fin-type field effect transistor simply and securely by using a SOI (Silicon On Insulator) wafer, capable of suppressing an undercut formation, is disclosed. The method includes forming a fin-shaped protrusion by selectively dry-etching a single crystalline silicon layer until an underlying buried oxide layer is exposed; forming a sacrificial oxide film by oxidizing a surface of the protrusion including a damage inflicted thereon; and forming a fin having a clean surface by removing the sacrificial oxide film by etching, wherein an etching rate r1of the sacrificial oxide film is higher than an etching rate r2of the buried oxide layer during the etching.

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