Manufacturing method of cylindrical stacked electrode

Details Manufacturing method of cylindrical stacked electrode Manufacturing method of cylindrical stacked electrode

1999-03-26

2000-08-15

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438970, H01L 218242, H01L 2120

Patent

active

061035688

ABSTRACT:
A method of manufacturing a cylindrical stacked electrode, which comprises the steps of forming a silicon film on a semiconductor substrate, forming an insulating film over said silicon film, etching said insulating film to open a first hole that reaches the semiconductor substrate lying beneath said silicon film, forming a second hole with a wider diameter than said first hole through said insulating film and, concurrently with that, opening a contact hole using said silicon film as a mask, burying said contact hole and, in addition, forming an amorphous silicon film into a shape of a cylindrical stacked electrode, forming a second insulating film on said amorphous silicon film to bury said second hole, etching said second insulating film to the level of the amorphous silicon surface, etching said amorphous silicon film to the level of the first insulating film surface, removing said insulating film, and removing a portion of the silicon film formed on the semiconductor substrate that is all but an area directly below said cylindrical stacked electrode.

REFERENCES:
patent: 5970359 (1999-10-01), Wang
patent: 6030866 (2000-02-01), Choi
patent: 6037213 (2000-03-01), Shih et al.

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