Manufacturing method of CMOS type semiconductor device, and...

Details Manufacturing method of CMOS type semiconductor device, and... Manufacturing method of CMOS type semiconductor device, and...

2011-01-04

2011-01-04

Lee, Eugene (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S369000

Reexamination Certificate

active

07863125

ABSTRACT:
The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.

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