Manufacturing method of a semiconductor eprom device

Details Manufacturing method of a semiconductor eprom device Manufacturing method of a semiconductor eprom device

1997-05-30

1998-08-11

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438261, H01L 21336, H01L 218247

Patent

active

057926956

ABSTRACT:
A first convex portion and a second convex portion are formed on a semiconductor substrate at a prescribed interval, an impurity diffusing region is formed on an upper portion of the semiconductor substrate placed between the first and second convex portions, and a thinned first polysilicon film is formed on the impurity diffusing region and the first and second convex portions. Thereafter, arsenic ions are implanted into the first polysilicon film to make the first polysilicon film conductive. Thereafter, a second polysilicon film having a film thickness larger than that of the first polysilicon film is formed, and phosphorus ions are implanted into the second polysilicon film to make the second polysilicon film conductive. Thereafter, a tungsten silicide film is formed on the second polysilicon film, and the tungsten silicide film and the first and second polysilicon films are patterned. Therefore, a two-layer structured electrode wiring film composed of a patterned tungsten silicide film and a combination of a patterned first polysilicon film and a patterned second polysilicon film is formed. Because the first polysilicon film is thinned, the first polysilicon film can be sufficiently conductive. Therefore, the first polysilicon film is electrically connected with the second polysilicon film on the first and second convex portions even though the second polysilicon film is not sufficiently conductive, and the electrode wiring film can be electrically connected with the impurity diffusing region.

REFERENCES:
patent: 4957877 (1990-09-01), Tam et al.
patent: 5029130 (1991-07-01), Yeh
patent: 5045488 (1991-09-01), Yeh
patent: 5067108 (1991-11-01), Jenq
patent: 5427966 (1995-06-01), Komori et al.
patent: 5552331 (1996-09-01), Hsu et al.

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