Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-25
2011-10-25
Landau, Matthew (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S210000, C438S221000, C438S230000, C438S238000, C438S296000, C438S581000, C438S583000, C438S655000, C257S068000, C257S071000, C257S073000, C257S202000, C257S296000, C257S301000, C257S365000, C257S412000, C257S413000, C257SE27084, C257SE21646
Reexamination Certificate
active
08043912
ABSTRACT:
A semiconductor device is provided with a semiconductor substrate comprising element isolation regions and an element region surrounded by the element isolation regions, a first polysilicon layer formed in the element region of the semiconductor substrate, an element-isolating insulation film formed in the element isolation region of the semiconductor substrate, a second polysilicon layer formed on the element-isolating insulation film, a first silicide layer formed on the first polysilicon layer. And the device further comprising a second silicide layer formed on the second polysilicon layer and being thicker than the first silicide layer.
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Foley & Lardner LLP
Kabushiki Kaisha Toshiba
Landau Matthew
Malek Maliheh
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