Manufacturing method of a semiconductor device capable of...

Details Manufacturing method of a semiconductor device capable of... Manufacturing method of a semiconductor device capable of...

2005-01-18

2005-01-18

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S382000, C438S384000, C438S649000, C438S659000, C438S239000, C438S385000, C438S241000

Reexamination Certificate

active

06844228

ABSTRACT:
A photoresist (6) is formed on an element isolation insulating film (2) so as to cover the upper and side surfaces of a polysilicon film (4R) which functions as a resistance element. With the photoresist (6) as an implantation mask, n-type impurities (7) such as phosphorus are ion-implanted from a direction substantially normal to the upper surface of a silicon substrate (1). The dose is in the order of 1013/cm2. Through this processing, an LDD region (8) of MOSFET is formed inside the upper surface of the silicon substrate (1) within a transistor forming region. The impurities (7) are also implanted in a polysilicon film (4G). On the other hand, as the polysilicon film (4R) is covered by the photoresist (6), the impurities (7) are not implanted into the polysilicon film (4R).

REFERENCES:
patent: 6165861 (2000-12-01), Liu et al.
patent: 20020127791 (2002-09-01), Nanjo et al.
patent: 59-16361 (1984-01-01), None
patent: 6-314770 (1994-11-01), None
patent: 11-251520 (1999-09-01), None
patent: 3153921 (2001-02-01), None

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