Manufacturing method of a semiconductor device

Details Manufacturing method of a semiconductor device Manufacturing method of a semiconductor device

2006-12-05

2006-12-05

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S302000, C438S524000

Reexamination Certificate

active

07144781

ABSTRACT:
A plurality of trenches, about 1 μm long in the Z-direction that crosses the X-direction (source-drain direction), are formed in a semiconductor substrate, arranged in the Z-direction. Ion implantation is performed obliquely with respect to side faces of each trench that cross the X-direction. Then, ion implantation is performed perpendicularly to the bottom face of each trench. Then, oxidation and drive-in are performed, whereby semiconductor portions between adjacent trenches are oxidized and each trench is thereby filled with an oxide to establish a wide trench region as would be obtained by connecting the trenches. At the same time, the impurity ions implanted around the trenches are diffused also in the Z-direction, whereby a uniform offset drain region is formed around the trench so that an optimum concentration and diffusion of the impurity ions is obtained, and an oxide or the like is buried in a wide trench region.

REFERENCES:
patent: 5844275 (1998-12-01), Kitamura et al.
patent: 6177704 (2001-01-01), Suzuki et al.
patent: 2002/0197782 (2002-12-01), Kitamura

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