Manufacturing method of a semiconductor apparatus having an elec

Details Manufacturing method of a semiconductor apparatus having an elec Manufacturing method of a semiconductor apparatus having an elec

1997-03-10

1999-10-05

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21336

Patent

active

059638125

ABSTRACT:
An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

REFERENCES:
patent: 4722909 (1988-02-01), Parillo et al.
patent: 4745086 (1988-05-01), Parrillo et al.
patent: 4975385 (1990-12-01), Beinglass et al.
patent: 5043294 (1991-08-01), Willer et al.
patent: 5179042 (1993-01-01), Mikoshiba et al.
patent: 5196372 (1993-03-01), Mikoshiba et al.
patent: 5200639 (1993-04-01), Sohizuka et al.
patent: 5227320 (1993-07-01), Johnson et al.
patent: 5233224 (1993-08-01), Ikeda et al.
patent: 5302855 (1994-04-01), Matsumoto et al.
patent: 5328873 (1994-07-01), Mikoshiba et al.
patent: 5364664 (1994-11-01), Tsubouchi et al.

Affiliated with

Also associated with

Rating

Manufacturing method of a semiconductor apparatus having an elec does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of a semiconductor apparatus having an elec, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of a semiconductor apparatus having an elec will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1182552