Manufacturing method of a memory device

Details Manufacturing method of a memory device Manufacturing method of a memory device

2007-05-22

2009-06-30

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S248000, C438S389000, C438S391000, C438S738000, C257SE21653

Reexamination Certificate

active

07553723

ABSTRACT:
A method of manufacturing a memory device. The memory device comprises a trench in a substrate, a capacitor at the low portion of the trench, a collar dielectric layer overlying the capacitor and covering a portion of the sidewall of the trench, and a conductive layer filling a portion of the trench over the capacitor. First, a first mask layer is formed on the conductive layer, wherein a bottom portion of the first mask layer is thicker than the side portion thereof in the trench. A second mask layer is formed on the first mask layer. Next, a portion of the second mask layer in the trench is ion implanted. The unimplanted portion of the second mask layer is removed.

REFERENCES:
patent: 6498061 (2002-12-01), Divakaruni et al.
patent: 6573137 (2003-06-01), Divakaruni et al.
patent: 2004/0197988 (2004-10-01), Heineck et al.

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