Manufacturing method of a dielectric layer for DRAM capacitors

Details Manufacturing method of a dielectric layer for DRAM capacitors Manufacturing method of a dielectric layer for DRAM capacitors

1997-12-23

2000-11-28

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438381, 438399, 438398, 438791, 438526, 438530, H01L 218242

Patent

active

061534617

ABSTRACT:
A manufacturing method of a dielectric layer for a dynamic random-access-memory capacitor comprising, at first, providing a substrate which has a first conductive layer for the capacitor implanting ions into the first conductive layer. Next, performing a anneal process so as to form the dielectric layer, and then performing a cleaning process with a resolution. Finally, forming a second conductive layer over the first conductive layer. By the manufacturing steps in this invention, it can reduce a thickness of the dielectric layer and increase the dielectric constant, so that charges which can be stored in per unit area of the capacitor without reducing the integration of the DRAM device. Furthermore, it will not reduce the integration of the DARM device.

REFERENCES:
patent: 4045250 (1977-08-01), Dingwall
patent: 4243433 (1981-01-01), Gibbons
patent: 5250456 (1993-10-01), Bryant
patent: 5429972 (1995-07-01), Anjum et al.
patent: 5654209 (1997-08-01), Kato
Wolf, S. and Tauber, R. N., Silicon Processing for the VLSI Era vol. 1--Process Technology, Scientific Library U.S.P.T.O. pp. 516-517, 1986.
Wolf, S. Silicon Processing for the VLSI Era vol. 2--Process Integration, Scientific Library U.S.P.T.O. pp. 186-189., 1990.

Affiliated with

Also associated with

Rating

Manufacturing method of a dielectric layer for DRAM capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of a dielectric layer for DRAM capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of a dielectric layer for DRAM capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1724582