Manufacturing method of a capacitor having a storage electrode w

Details Manufacturing method of a capacitor having a storage electrode w Manufacturing method of a capacitor having a storage electrode w

1992-07-22

1994-07-19

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 60, 437915, H01L 21306

Patent

active

053306147

ABSTRACT:
Disclosed are a semiconductor memory device and method for manufacturing the same. The method includes a process for manufacturing a capacitor performed by the steps of forming a first conductive layer on a semiconductor substrate, forming a first pattern composed of a 1st first-material layer on the first conductive layer, forming a first sidewall spacer composed of 1st second-material layer on the resultant structure, and etching the material layer under the first sidewall spacer, using the first sidewall spacer as an etch-mask. The semiconductor memory device thus manufactured can be highly integrated and is highly reliable.

REFERENCES:
patent: 5047817 (1991-09-01), Wakamiya et al.
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5100828 (1992-03-01), Fujii et al.
patent: 5164337 (1992-11-01), Ogawa et al.
Kakimoto et al., "A Stacked Capacitor Cell with Ring Structure", Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 833-836.

Affiliated with

Also associated with

Rating

Manufacturing method of a capacitor having a storage electrode w does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method of a capacitor having a storage electrode w, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method of a capacitor having a storage electrode w will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-517562