Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Patent
1997-10-27
2000-12-26
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
438303, 438305, 438696, H01L 213205, H01L 21308
Patent
active
061659134
ABSTRACT:
A method for manufacturing spacers comprising the steps of first providing a semiconductor substrate having a gate electrode already formed thereon, and then sequentially depositing oxide, silicon nitride and oxide over the gate electrode and the substrate to form a first oxide layer, a silicon nitride layer and a second oxide layer. Subsequently, the second oxide layer is etched to form an oxide spacer above the silicon nitride layer. Thereafter, using the oxide spacer as a mask, a dry etching method having a high etching selectivity ratio for silicon nitride/oxide is used to etch the silicon nitride layer to form a silicon nitride spacer. Finally, the oxide spacer is removed using an oxide dip method. The silicon nitride spacers of this invention can have a greater thickness, more thickness uniformity, and a higher reliability for hot carriers. In addition, the method used in the invention can have a better control over the thickness.
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Huang Heng-Sheng
Lin Tony
Bowers Charles
Kilday Lisa
United Microelectronics Corp.
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