Manufacturing method for semiconductor device and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S222000, C438S226000, C438S301000

Reexamination Certificate

active

07902030

ABSTRACT:
A manufacturing method for semiconductor device includes: forming an opening, in a surface of a semiconductor substrate being composed of first atom, the opening having an opening ratio y to an area of the surface of the semiconductor substrate ranging from 5 to 30%; forming an epitaxial layer in the opening, the epitaxial layer being made of a mixed crystal containing a second atom in a concentration ranging from 15 to 25%, and the second atom having a lattice constant different from a lattice constant of the first atom; implanting impurity ion into the epitaxial layer; and performing activation annealing at a predetermined temperature T, the predetermined temperature T being equal to or higher than 1150° C. and satisfies a relationship of y≦1E-5exp(21541/T).

REFERENCES:
patent: 2005/0285203 (2005-12-01), Fukutome et al.
patent: 2006/0128105 (2006-06-01), Ouyang et al.
patent: 2006/0231826 (2006-10-01), Kohyama
patent: 2007/0196989 (2007-08-01), Kim et al.
patent: 2009/0098665 (2009-04-01), Bu et al.
patent: 2004-63574 (2004-02-01), None
patent: 2007-36205 (2007-02-01), None

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