Manufacturing method for ROM components having a silicon control

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438279, H01L 218234, H01L 218246

Patent

active

058518851

ABSTRACT:
A manufacturing method and a structure for ROM component having a silicon controlled rectifier as the basic memory instead of a channel transistor in a conventional ROM, and using a formation of contact windows for coding a ROM instead of performing an ion implantation process. Also, since a silicon controlled rectifier occupies a smaller component surface area, the level of integration is correspondingly increased, and furthermore, because of the interposition of an insulating layer between two bit lines, short circuiting between the adjacent bit lines are prevented. The component of this invention operates by applying a suitable voltage to the word line electrode and the bit line electrode respectively to select a particular memory unit, and as a result, a current will flow in a vertical direction through the memory unit, exit through the common electrode depending on the ON/OFF state of the memory, and be detected there.

REFERENCES:
patent: 5426066 (1995-06-01), Fu et al.
patent: 5514605 (1996-05-01), Asai et al.
patent: 5747856 (1998-05-01), Chen et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Manufacturing method for ROM components having a silicon control does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacturing method for ROM components having a silicon control, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for ROM components having a silicon control will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2046950

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.