Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-05-30
1998-12-22
Chang, Joni
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438279, H01L 218234, H01L 218246
Patent
active
058518851
ABSTRACT:
A manufacturing method and a structure for ROM component having a silicon controlled rectifier as the basic memory instead of a channel transistor in a conventional ROM, and using a formation of contact windows for coding a ROM instead of performing an ion implantation process. Also, since a silicon controlled rectifier occupies a smaller component surface area, the level of integration is correspondingly increased, and furthermore, because of the interposition of an insulating layer between two bit lines, short circuiting between the adjacent bit lines are prevented. The component of this invention operates by applying a suitable voltage to the word line electrode and the bit line electrode respectively to select a particular memory unit, and as a result, a current will flow in a vertical direction through the memory unit, exit through the common electrode depending on the ON/OFF state of the memory, and be detected there.
REFERENCES:
patent: 5426066 (1995-06-01), Fu et al.
patent: 5514605 (1996-05-01), Asai et al.
patent: 5747856 (1998-05-01), Chen et al.
Chang Joni
United Microelectronics Corp.
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