Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-04-14
2000-03-14
Saadat, Mahshid
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438276, 438280, 438275, 438257, 257390, 257391, H02L 21265
Patent
active
060372257
ABSTRACT:
The present invention includes forming word lines on a substrate. Next, nitride spacers are formed on the side walls of the word lines. In the cell area, a photoresist is patterned on the substrate to cover a coding region. Then, an ion implantation with n type conductive dopant is carried out to form buried bit lines in the cell area and in the peripheral area adjacent to the word lines. Afterwards, the photoresist is stripped. A high temperature thermal oxidation is then performed to activate the dopant and to form thick oxide structures to isolate the adjacent buried bit lines.
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Richards N. Drew
Saadat Mahshid
Texas Instruments - Acer Incorporated
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