Manufacturing method for bipolar gate CMOS semiconductor device

Details Manufacturing method for bipolar gate CMOS semiconductor device Manufacturing method for bipolar gate CMOS semiconductor device

2005-04-19

2005-04-19

Pascal, Robert (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S229000, C438S232000

Reexamination Certificate

active

06881617

ABSTRACT:
A manufacturing method for a bipolar gate CMOS semiconductor device is provided that eliminates a masking process for P-type polycrystalline silicon. An N-type polycrystalline silicon region is selectively formed in polycrystalline silicon constituting a gate electrode through predeposition using an insulating film as a mask, after which the insulating film is removed to implant P-type impurity ions into the entire surface to form a P-type polycrystalline silicon region.

REFERENCES:
patent: 4045259 (1977-08-01), Sanders
patent: 5563093 (1996-10-01), Koda et al.
patent: 6258646 (2001-07-01), Fulford et al.

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