Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-12-25
2007-12-25
Landau, Matthew C. (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S244000, C438S386000, C438S387000, C257SE21651
Reexamination Certificate
active
11115391
ABSTRACT:
The present invention relates to a manufacturing method for a trench capacitor having an isolation collar which is electrically connected with a substrate on a single side via a buried contact. More specifically, the present invention relates to manufacturing method for a trench capacitor having an isolation collar with a metal conductive fill in the collar region connected to a metal fill in the capacitor region.
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patent: 6905897 (2005-06-01), Hsu
patent: 7170125 (2007-01-01), Seidl et al.
patent: 2005/0020024 (2005-01-01), Goldbach
patent: 2005/0026384 (2005-02-01), Kudelka et al.
patent: 2005/0106831 (2005-05-01), Hsu et al.
patent: 2005/0153507 (2005-07-01), Hecht et al.
Aichmayr Guenther
Kudelka Stephan
Eschweiler & Associates LLC
Landau Matthew C.
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