Manufacturing method for a silicon substrate having strained...

Details Manufacturing method for a silicon substrate having strained... Manufacturing method for a silicon substrate having strained...

2006-06-13

2006-06-13

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

C257S616000, C257S623000, C117S097000

Reexamination Certificate

active

07060597

ABSTRACT:
A manufacturing method for a silicon substrate having a strained layer, has steps of forming a plurality of atomic steps having a height of 0.1 nm or more on the surface of a silicon substrate, forming a plurality of terraces having a width of 0.1 μm or more between the plurality of atomic steps and forming a SiGe layer or a SiGe layer and a Si layer on the silicon substrate.

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