Manufacturing method for a semiconductor device with reduced...

Details Manufacturing method for a semiconductor device with reduced... Manufacturing method for a semiconductor device with reduced...

2007-05-15

2007-05-15

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S289000, C438S301000, C257SE21217, C257SE21268, C257SE21455

Reexamination Certificate

active

10809011

ABSTRACT:
A semiconductor device including: a first gate insulating film which is pattern-formed on an N type well region within a P type semiconductor substrate; a second gate insulating film which is formed on the semiconductor substrate except for this first gate insulating film; a gate electrode, which is formed in such a manner that this gate electrode is bridged over the first gate insulating film and the second gate insulating film; a P type body region which is formed in such a manner that this P type body region is located adjacent to the gate electrode; an N type source region and a channel region, which are formed within this P type body region; and an N type drain region which is formed at a position separated from the P type body region.

REFERENCES:
patent: 6255154 (2001-07-01), Akaishi et al.
patent: 2002/0050619 (2002-05-01), Kawaguchi et al.
patent: 03-077463 (1991-03-01), None
patent: 04-154173 (1992-05-01), None
patent: 04-162678 (1992-06-01), None
patent: 1999-38946 (1999-06-01), None
patent: 1999-0041054 (1999-06-01), None

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