Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-06-06
2006-06-06
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S756000, C438S777000
Reexamination Certificate
active
07056836
ABSTRACT:
In a method for manufacturing a semiconductor device, a first silicon oxide film is formed on a semiconductor substrate. The first silicon oxide film is nitrided so that silicon oxynitride forms at an interface between the semiconductor substrate and the first silicon oxide film. The first silicon oxide film is removed from a portion of the semiconductor substrate using a chemical containing at least an ammonia-hydrogen peroxide solution so that the silicon oxynitride formed at the interface between the portion of the semiconductor substrate and the first silicon oxide film is completely removed. Thereafter, a second silicon oxide film is formed in the portion of the semiconductor substrate from which the first silicon oxide film and the silicon oxynitride have been removed.
REFERENCES:
patent: 6235590 (2001-05-01), Daniel et al.
patent: 6423565 (2002-07-01), Barth et al.
patent: 6436848 (2002-08-01), Ramkumar
patent: 6607948 (2003-08-01), Sugiyama et al.
patent: 6767812 (2004-07-01), Abe et al.
patent: 6787480 (2004-09-01), Aoki et al.
patent: 6797606 (2004-09-01), Noguchi et al.
patent: 6797609 (2004-09-01), Noguchi et al.
patent: 6815330 (2004-11-01), Noguchi et al.
patent: 2004/0072397 (2004-04-01), Lowe et al.
Adams & Wilks
Ghyka Alexander
Seiko Instruments Inc.
LandOfFree
Manufacturing method for a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacturing method for a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacturing method for a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3664640