Manufacturing method and equipment of single silicon crystal

Details Manufacturing method and equipment of single silicon crystal Manufacturing method and equipment of single silicon crystal

1990-01-03

1992-02-11

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566171, 1566201, 156DIG64, 156DIG115, 422247, 422249, C30B 1502, C30B 1512, C30B 1522, C30B 3500

Patent

active

050873210

ABSTRACT:
Method for manufacturing a large columner silicon single crystal having a diameter of 12 cm-30 cm by pulling up a crystal, growing, and rotating it in one direction, from molten silicon material in a quartz crucible rotating in the other direction. The inside of the quartz crucible is divided into two sections--the peripheral section for feeding and melting raw materials and the central section for growing and pulling the crystal--by means of a cylindrical partition. The material feeding and melting section and the partition are sufficiently covered by an insulating board to reduce radiant energy heat loss and to keep the temperature at least above the freezing point of the molten materials in order to prevent the molten materials from solidifying at or around the inner wall of the cylindrical partition.

REFERENCES:
patent: 2892739 (1959-06-01), Rusler
patent: 3078151 (1973-02-01), Kappelmeyer
patent: 3265469 (1966-08-01), Hall
patent: 4203951 (1980-05-01), Goriletsky et al.
patent: 4330363 (1982-05-01), Zulener
patent: 4659421 (1987-04-01), Jewett
patent: 4786479 (1988-11-01), Hundal et al.

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