Manufacturing gallium nitride substrates by lateral...

Details Manufacturing gallium nitride substrates by lateral... Manufacturing gallium nitride substrates by lateral...

2004-05-18

2008-11-04

Kunemund, Robert M. (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S095000, C117S096000, C117S097000, C117S952000

Reexamination Certificate

active

07445673

ABSTRACT:
Gallium nitride substrates are grown by epitaxial lateral overgrowth using multiple steps. On a masked substrate having openings areas, selective growth produces first triangular stripes in which most of the threading dislocations are bent at 90°. In a second step, growth conditions are changed to increase the lateral growth rate and produce a flat (0001) surface. At this stage the density of dislocations on the surface is <5×107 cm 2. Dislocations are primarily located at the coalescence region between two laterally grown facets pinching off together. To further decrease the dislocation density a second masking step is achieved, with the openings exactly located above the first ones. Threading dislocations (TDs) of the coalescence region do not propagate in the top layer. Therefore the density of dislocations is lowered below <1×107 cm lover the entire surface.

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