Manufacturing apparatus for buried insulating layer-type...

Details Manufacturing apparatus for buried insulating layer-type... Manufacturing apparatus for buried insulating layer-type...

2006-10-31

2006-10-31

Whitehead, Jr., Carl (Department: 2813)

Coating apparatus

Gas or vapor deposition

C438S479000

Reexamination Certificate

active

07128788

ABSTRACT:
A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate100,which has a surface silicon layer130of a predetermined thickness and a buried insulator120,in a heating furnace200and of increasing the temperature of the atmosphere within heating furnace200while supplying a mixed gas (G1+G2) of a hydrogen gas G1and of a hydrocarbon gas G2into heating furnace200,thereby, of metamorphosing surface silicon layer130of SOI substrate100into a single crystal silicon carbide thin film140.

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European Search Report dated Dec. 16, 2005.

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