Manufacturing a semiconductive device using a controlled...

Details Manufacturing a semiconductive device using a controlled... Manufacturing a semiconductive device using a controlled...

2006-03-10

2009-02-24

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21158, C257SE21580

Reexamination Certificate

active

07494882

ABSTRACT:
A method for manufacturing a semiconductive device comprising forming a mask for a semiconductive device structure over a layer of a semiconductor substrate and partially etching the layer to form lateral and vertical surfaces. Thicknesses of one to several atomic diameters of atoms that comprise said layer are removed from the lateral surfaces and the vertical surfaces that are located under the mask to form a target dimension of a semiconductive device structure.

REFERENCES:
patent: 5741736 (1998-04-01), Orlowski et al.
patent: 6146930 (2000-11-01), Kobayashi et al.

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