Manufacture system for semiconductor device with thin gate...

Details Manufacture system for semiconductor device with thin gate... Manufacture system for semiconductor device with thin gate...

2006-01-10

2006-01-10

Lund, Jeffrie R. (Department: 1763)

Coating apparatus

Gas or vapor deposition

C118S724000, C118S725000, C432S241000, C156S345290, C156S345330

Reexamination Certificate

active

06984267

ABSTRACT:
A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N2O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700° C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

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Korean Office Action dated May 30, 2005 (Korean Appln. 99-24800).

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