Manufacture of semiconductor device with stress structure

Details Manufacture of semiconductor device with stress structure Manufacture of semiconductor device with stress structure

2009-10-27

2011-12-06

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S269000, C438S285000, C438S300000, C438S933000, C257SE29193

Reexamination Certificate

active

08071435

ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of (a) forming a gate electrode on a silicon substrate, through a gate insulating film; (b) forming a lamination of an insulating film and a sacrificial film having different etching characteristics on the silicon substrate, covering the gate electrode, and anisotropically etching the lamination to form side wall spacers on side walls of the gate electrode and the gate insulating film; (c) implanting impurities into the silicon substrate on both sides of the side wall spacers; (d) etching the silicon substrate and the sacrificial film to form recesses in the silicon substrate, and to change a cross sectional shape of each of the side wall spacers to approximately an L-shape; (e) epitaxially growing Si—Ge-containing crystal in the recesses; and (f) depositing an insulating film containing stress, covering the side wall spacers.

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