Manufacture of semiconductor device having low contact resistanc

Details Manufacture of semiconductor device having low contact resistanc Manufacture of semiconductor device having low contact resistanc

1996-09-24

1998-12-22

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438231, 148DIG20, H01L 218234

Patent

active

058518690

ABSTRACT:
A semiconductor device capable of stably operating even at a low voltage, incudes: a semiconductor substrate having a surface region of a first conductivity type; a conductive film directly formed on a surface of the surface region at an area thereof, the conductive film containing impurities of a second conductivity type opposite to the first conductivity type; an oozed diffusion region of the second conductivity type formed by diffusion of the impurities in the conductive film into the substrate, the oozed diffusion region being formed at an area contiguous to the conductive film in the surface region; a low resistivity region of the second conductivity type extending from an area adjacent to the conductive film in the surface region and overlapping the conductive film; and a DDD structure transistor formed on another region of the surface region, wherein a length of a portion of the low resistivity region overlapping the conductive film is substantially the same as a length of a portion of the deep source and drain regions of the DDD structure overlapping the gate electrode.

REFERENCES:
patent: 4734383 (1988-03-01), Ikeda et al.
patent: 4984200 (1991-01-01), Saitoo et al.
patent: 5278082 (1994-01-01), Kawamura
patent: 5317197 (1994-05-01), Roberts
patent: 5372956 (1994-12-01), Baldi
patent: 5373170 (1994-12-01), Pfiester et al.
patent: 5418179 (1995-05-01), Hotta

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