Manufacture of semiconductor device

Details Manufacture of semiconductor device Manufacture of semiconductor device

2007-11-21

2010-11-16

Bryant, Kiesha R (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S224000

Reexamination Certificate

active

07833866

ABSTRACT:
A reflectance-controlling layer whose reflectance to irradiation of laser light becomes lower as a thickness thereof becomes thinner is formed on a semiconductor substrate having a first region and a second region. Thereafter, the reflectance-controlling layer on the first region is etched. Then, a laser light is irradiated to the semiconductor substrate to anneal an n−-type semiconductor region and an n+-type semiconductor region of the first region. In the same manner, after the reflectance-controlling layer is formed on the semiconductor substrate, the reflectance-controlling layer on the second region is etched. Then, a laser light is irradiated to the semiconductor substrate to anneal a p−-type semiconductor region and a p+-type semiconductor region of the second region.

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Chinese Official Action issued Mar. 25, 2010, in Application No. 200710186827.6.
Chinese Official Action issued Apr. 3, 2009, in Application No. 2007101868276.

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