Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Patent
1995-07-31
1997-09-09
Niebling, John
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
438780, 438624, H01L 2144
Patent
active
056656432
ABSTRACT:
A method of manufacturing a semiconductor device having an insulating film includes the steps of: preparing a substrate having a step on a surface thereof; coating polysilazane on the surface of the substrate; and curing the polysilazane in a non-oxidizing atmosphere. Polysilazane coated on a substrate can be cured without corrosion and destruction of underlie wiring patterns.
REFERENCES:
patent: 4103045 (1978-07-01), Lesaicherre et al.
patent: 4826733 (1989-05-01), Haluska et al.
patent: 5310720 (1994-05-01), Shin et al.
patent: 5436083 (1995-07-01), Haluska et al.
Stanley Wolf, "Silicon Processing for the VLSI Era vol. 2" Lattice Press (Calif.) (1990) pp. 194-195 and 430-431.
Everhart C.
Fujitsu Limited
Niebling John
LandOfFree
Manufacture of planarized insulating layer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manufacture of planarized insulating layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacture of planarized insulating layer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-69562