Manufacture of planarized insulating layer

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438780, 438624, H01L 2144

Patent

active

056656432

ABSTRACT:
A method of manufacturing a semiconductor device having an insulating film includes the steps of: preparing a substrate having a step on a surface thereof; coating polysilazane on the surface of the substrate; and curing the polysilazane in a non-oxidizing atmosphere. Polysilazane coated on a substrate can be cured without corrosion and destruction of underlie wiring patterns.

REFERENCES:
patent: 4103045 (1978-07-01), Lesaicherre et al.
patent: 4826733 (1989-05-01), Haluska et al.
patent: 5310720 (1994-05-01), Shin et al.
patent: 5436083 (1995-07-01), Haluska et al.
Stanley Wolf, "Silicon Processing for the VLSI Era vol. 2" Lattice Press (Calif.) (1990) pp. 194-195 and 430-431.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Manufacture of planarized insulating layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Manufacture of planarized insulating layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manufacture of planarized insulating layer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-69562

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.