Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-13
2008-05-13
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S283000, C438S303000, C438S305000
Reexamination Certificate
active
07371646
ABSTRACT:
After a field insulating film having an element opening is formed on the surface of a p-type well, a gate insulating film is formed on a semiconductor surface in the element opening. A gate electrode layer of polysilicon or the like is formed on the insulating film. By using as a mask a lamination of the electrode layer and gate insulating film and the field insulating film, an ion implantation process is executed to form n+-type source and drain regions. After the electrode layer is made narrow and thin by an isotropic etching process, n−-type source and drain regions are formed by an ion implantation process using as a mask the lamination of the electrode layer and gate insulating film and the field insulating film.
REFERENCES:
patent: 5270233 (1993-12-01), Hamatake
patent: 5869378 (1999-02-01), Michael
patent: 363067778 (1988-03-01), None
patent: 406216149 (1994-08-01), None
patent: H06-275635 (1994-09-01), None
Dickstein , Shapiro, LLP.
Duong Khanh
Wilczewski Mary
Yamaha Corporation
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