Manufacture of insulated gate type field effect transistor

Details Manufacture of insulated gate type field effect transistor Manufacture of insulated gate type field effect transistor

2008-05-13

2008-05-13

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C438S303000, C438S305000

Reexamination Certificate

active

07371646

ABSTRACT:
After a field insulating film having an element opening is formed on the surface of a p-type well, a gate insulating film is formed on a semiconductor surface in the element opening. A gate electrode layer of polysilicon or the like is formed on the insulating film. By using as a mask a lamination of the electrode layer and gate insulating film and the field insulating film, an ion implantation process is executed to form n+-type source and drain regions. After the electrode layer is made narrow and thin by an isotropic etching process, n−-type source and drain regions are formed by an ion implantation process using as a mask the lamination of the electrode layer and gate insulating film and the field insulating film.

REFERENCES:
patent: 5270233 (1993-12-01), Hamatake
patent: 5869378 (1999-02-01), Michael
patent: 363067778 (1988-03-01), None
patent: 406216149 (1994-08-01), None
patent: H06-275635 (1994-09-01), None

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